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Type Designator: C5198

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C


Transition Frequency (ft): 30 MHz


Collector Capacitance (Cc): 220 pF


Forward Current Transfer Ratio (hFE), MIN: 55


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